savantic semiconductor product specification silicon pnp power transistors MJL21193 d escription with to-3pl package complement to type mjl21194 excellent gain linearity applications designed for high power audio output,disk head positioners and linear applications pinning pin description 1 emitter 2 collector;connected to mounting base 3 base absolute maximum ratings(t c =25) symbol parameter conditions max unit v cbo collector-base voltage open emitter -400 v v ceo collector-emitter voltage open base -250 v v ebo emitter-base voltage open collector -5 v i c collector current -16 a i cm collector current-peak -30 a i b base current -5 a p d total power dissipation t c =25 200 w t j junction temperature -65~150 t stg storage temperature -65~150 thermal characteristics symbol parameter value unit r th j-c thermal resistance from junction to case 0.7 /w fig.1 simplified outline (to-3pl) and symbol
savantic semiconductor product specification 2 silicon pnp power transistors MJL21193 characteristics tj=25 unless otherwise specified symbol parameter conditions min typ. max unit v (br)ceo collector-emitter breakdown voltage i c =-100ma ;i b =0 -250 v v ce (sat) -1 collector-emitter saturation voltage i c =-8a; i b =-0.8a -1.4 v v ce (sat) -2 collector-emitter saturation voltage i c =-16a; i b =-3.2a -4.0 v v be(on) base-emitter on voltage i c =-8a ; v ce =-5v -2.2 v i cex collector cut-off current v ce =-250v; v be( off ) =-1.5v -100 a i ceo collector cut-off current v ce =-200v; i b =0 -100 a i ebo emitter cut-off current v eb =-5v; i c =0 -100 a h fe-1 dc current gain i c =-8a ; v ce =-5v 25 75 h fe-2 dc current gain i c =-16a ; v ce =-5v 8 f t transition frequency i c =-1a ; v ce =-10v,f=1mhz 4 mhz c ob collector output capacitance f=1mhz;v cb =-10v,i e =0 500 pf
savantic semiconductor product specification 3 silicon pnp power transistors MJL21193 package outline fig.2 outline dimensions (unindicated tolerance: 0.50 mm)
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